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 BYG21
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D D D D D D
Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable
15 811
Applications
Surface mounting Fast rectifier Freewheeling diodes in SMPS and converters Snubber diodes
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type BYG21K BYG21M Symbol VR=VRRM VR=VRRM IFSM IFAV Tj=Tstg I(BR)R=1A, Tj=25C ER Value 800 1000 30 1.5 -55...+150 20 Unit V V A A C mJ
tp=10ms, half sinewave
Maximum Thermal Resistance
Tj = 25_C Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy-glass hard tissue mounted on epoxy-glass hard tissue, 50mm2 35mm Cu mounted on Al-oxid-ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W
Document Number 86010 Rev. 3, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (5)
BYG21
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ Max 1.5 1.6 1 10 120 Unit V V
mA mA
ns
Characteristics (Tj = 25_C unless otherwise specified)
100 I R - Reverse Current ( mA ) IF - Forward Current ( A ) 100
10
10
1 VR = VR RM 0.1
1 25C
75C
Tj = 125C 0.1
0.01 0
94 9347
0.01 40 80 120 160 200
94 9348
0
1
2
3
4
Tj - Junction Temperature ( C )
VF - Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Typ. Forward Current vs. Forward Voltage
600
I FAV- Average Forward Current ( A )
trr - Reverse Recovery Time ( ns )
2.0 1.6 RthJA=25K/W 1.2 0.8 0.4 150K/W 0 0 40 80 120 160 200
Tamb= 125C 500 100C 400 300 200 100 IR=0.5A, iR=0.125A 0 0 0.2 0.4 0.6 0.8 1.0 75C 50C 25C
100K/W 125K/W
94 9345
Tamb - Ambient Temperature ( C )
94 9349
IF - Forward Current ( A )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Reverse Recovery Time vs. Forward Current
www.vishay.de * FaxBack +1-408-970-5600 2 (5)
Document Number 86010 Rev. 3, 24-Jun-98
BYG21
Vishay Telefunken
200 Qrr - Reverse Recovery Charge ( nC ) Tamb= 125C 150 75C 50C 100 25C 50 IR=0.5A, iR=0.125A 0 0
94 9350
100C
0.2
0.4
0.6
0.8
1.0
IF - Forward Current ( A )
Figure 5. Max. Reverse Recovery Charge vs. Forward Current
Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000
125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 1 10-5 10-4 10-3 10-2 10-1 100 101 102 Single Pulse
94 9339
tp - Pulse Length ( s )
Figure 6. Thermal Response
Document Number 86010 Rev. 3, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (5)
BYG21
Vishay Telefunken Dimensions in mm
14275
www.vishay.de * FaxBack +1-408-970-5600 4 (5)
Document Number 86010 Rev. 3, 24-Jun-98
BYG21
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86010 Rev. 3, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 5 (5)


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